High temperature viscoelastic relaxation in low-loss dielectrics shifts z-axis strains to microvias, causing interfacial target-pad tears caught only by in-situ testing.
Calibrating ASIC thermal cycling requires matching ramp rates and dwell times to die-level thermal lag, isolating latent microvia defects without exceeding fatigue limits.
Substrate Z-axis thermal expansion above Tg drives low-cycle fatigue and target pad separation in HDI microvias during SAC305 lead-free reflow profiles.
Quantifying stacked microvia thermal fatigue requires matching resin z-axis CTE limits to electrodeposited copper ductility under continuous resistance monitoring.
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